Author:Adolphus Nippae

Adolphus Nippae

Electronic Engineering
Liberia

Program of Masters & PhD in Engineering
Faculty of Engineering
•••••••••••aanippae@yahoo.com
POLITECNICO DI TORINO
Liberia

     

INTRODUCTION

•••Radio-Frequency Class J Amplifiers

Recent advancements in the electronic communication request the need for high efficiency, as such there are needs for high efficiency wideband Radio Frequency Power Amplifier (RFPA) for future application in the communication industry. From the technological point of view, Gallium Nitride High Electrons Mobility Transistors (GaN HEMT) appear to be one of the most promising technologies, especially due to its capability for reduce size, resulting in minor weight and parasitic effects. On the other side, circuit design scientific community has shown an increasing interest in the Class J RFPA: it derives from the Class B RFPA, and in particular its implementation with GaN can be made useful to achieved wider bandwidth RFPA. In this framework, this thesis work has started from the Class J waveforms analysis. In order to achieve this task, theoretical basis of the Class J have been exploited and Matlab was used to analyze the waveforms of the Class J. To prove the equivalence of the Class J to the Class B in terms of performances, and aiming at using electronic components to prove the reality of this emerging device, Microwave Office (MWO) simulations were performed starting with an ideal model and passing on to more real structures. Finally, after performing these analysis and simulations, the Class J was proven to have similar drain efficiency and output power to that of the Class B.

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TITLE - Radio-Frequency Class J Amplifiers
AUTHOR - Adolphus Nippae
••••••IJSER Edition - May 2020

UNIVERSITY - POLITECNICO DI TORINO
GUIDE NAME -
Prof Giovanni Ghione
Prof Marco Pirola



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